利用非方形网格提高纳米电路成品率

C. Argyrides, Nikolaos Mavrogiannakis, D. Pradhan
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引用次数: 0

摘要

基于纳米技术的制造,依赖于纳米管或纳米线的自组装,已经被预测为硅技术的替代品,因为基于光刻的集成电路在特征尺寸方面接近其极限。然而,这样的过程有很高的缺陷密度,必须用有效的缺陷容忍技术来处理。在本文中,我们提出了一种技术,该技术对于给定的电路尺寸,利用无缺陷的非方形但矩形交叉棒的不同组合来构建具有提高成品率的所需电路。我们扩展了我们最近提出的算法[1]来处理非方形网格。我们的目标是通过将无缺陷的非方形矩形子集连接在一起来提高无缺陷横条的数量和总良率。我们还估计了所得到电路的可靠性,并观察到虽然我们的架构的良率显着增加,但可靠性却由于互连数量的增加而降低。最后,我们提供了一个优化架构的指导方针,在良率和可靠性之间进行最佳权衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved Yield in Nanotechnology Circuits Using Non-square Meshes
Nanotechnology based fabrication, which relies on self-assembly of nanotubes or nanowires has been predicted to be an alternative to silicon technology since lithography based IC is approaching its limit in terms of feature size. However, such processes are expected to have high defect density and have be handled with effective defect tolerant techniques. In this paper, we propose a technique, which for a given circuit size, utilizes different combinations of defect-free non-square but rectangular crossbars to construct the desired circuit with improved yield. We extend our recently proposed algorithm[1] to cope with non-square meshes. We aim to improve the number of defect-free crossbars and also to improve the total yield by connecting defect-free non-square but rectangular subsets together. We also estimate the reliability of the resulting circuits and observed that while the yield increases significantly in our architecture, the reliability, however, decreases due to the increased number of interconnects. Finally, we provide a guideline to optimize the architecture making an optimal trade off between the yield and the reliability.
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