用Vmin变分法计算SRAM产品的活化能

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984863

T. Han, Kuo Shuen Chao, Huang Kuan Chieh

{"title":"用Vmin变分法计算SRAM产品的活化能","authors":"T. Han, Kuo Shuen Chao, Huang Kuan Chieh","doi":"10.1109/IPFA47161.2019.8984863","DOIUrl":null,"url":null,"abstract":"TAF is a necessary value for calculating the operation Lifetime of IC product. The activation energy (Ea) is the parameter value required to calculate the TAF. Each company has different ways of obtaining activation energy (Ea). Some used function test pass/fail and also current change. Our method is based on the characteristics of SRAM products and the memory unit data storage capacity was used. The activation energy (Ea) value was calculated by analyzing the decay of the lowest operating voltage of the data after two kinds of accelerations at high temperature and high bias. After the experiment, we obtained the activation energy (Ea) value of 0.81eV. The relevant research are all in this paper.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Calculating Activation Energy (Ea) of SRAM Product Using The Vmin Variation Method\",\"authors\":\"T. Han, Kuo Shuen Chao, Huang Kuan Chieh\",\"doi\":\"10.1109/IPFA47161.2019.8984863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"TAF is a necessary value for calculating the operation Lifetime of IC product. The activation energy (Ea) is the parameter value required to calculate the TAF. Each company has different ways of obtaining activation energy (Ea). Some used function test pass/fail and also current change. Our method is based on the characteristics of SRAM products and the memory unit data storage capacity was used. The activation energy (Ea) value was calculated by analyzing the decay of the lowest operating voltage of the data after two kinds of accelerations at high temperature and high bias. After the experiment, we obtained the activation energy (Ea) value of 0.81eV. The relevant research are all in this paper.\",\"PeriodicalId\":169775,\"journal\":{\"name\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA47161.2019.8984863\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

TAF是计算集成电路产品工作寿命的必要值。活化能(Ea)是计算TAF所需的参数值。每个公司获得活化能(Ea)的方法不同。一些使用的功能测试通过/失败，以及当前的变化。我们的方法是根据SRAM产品的特点，利用存储单元的数据存储容量。通过分析数据在高温和高偏置两种加速度作用下的最低工作电压衰减，计算出了活化能Ea值。经过实验，我们得到的活化能(Ea)值为0.81eV。相关研究均在本文中进行。

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Calculating Activation Energy (Ea) of SRAM Product Using The Vmin Variation Method

TAF is a necessary value for calculating the operation Lifetime of IC product. The activation energy (Ea) is the parameter value required to calculate the TAF. Each company has different ways of obtaining activation energy (Ea). Some used function test pass/fail and also current change. Our method is based on the characteristics of SRAM products and the memory unit data storage capacity was used. The activation energy (Ea) value was calculated by analyzing the decay of the lowest operating voltage of the data after two kinds of accelerations at high temperature and high bias. After the experiment, we obtained the activation energy (Ea) value of 0.81eV. The relevant research are all in this paper.

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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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