{"title":"用于高密度阵列的六个最CAM单元","authors":"Qiu Yulin","doi":"10.1109/ESSCIRC.1988.5468433","DOIUrl":null,"url":null,"abstract":"A new CAM cell has been presented. The cell consists of only 6 MOS transistors and the size of it can be comparable to full CMOS SRAM cell. It can work either statically or dynamically. Hence, it provides a possibility to develop high density CAM chip.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Six Most CAM Cell For High Density Array\",\"authors\":\"Qiu Yulin\",\"doi\":\"10.1109/ESSCIRC.1988.5468433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new CAM cell has been presented. The cell consists of only 6 MOS transistors and the size of it can be comparable to full CMOS SRAM cell. It can work either statically or dynamically. Hence, it provides a possibility to develop high density CAM chip.\",\"PeriodicalId\":197244,\"journal\":{\"name\":\"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1988.5468433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1988.5468433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new CAM cell has been presented. The cell consists of only 6 MOS transistors and the size of it can be comparable to full CMOS SRAM cell. It can work either statically or dynamically. Hence, it provides a possibility to develop high density CAM chip.
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