{"title":"用于非易失性存储器的Pt/Ta2O5/TiN结构的电阻开关","authors":"Jian-Yang Lin, Jyun-hao Chen","doi":"10.1109/NMDC.2013.6707472","DOIUrl":null,"url":null,"abstract":"The bipolar resistive switching characteristics of the Ta<sub>2</sub>O<sub>5</sub>-based resistive random access memories with a Pt/Ta<sub>2</sub>O<sub>5</sub>/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 10<sup>5</sup> cycles under pulse switching operation and retention characteristics up to 10<sup>4</sup> s at room temperature have been achieved in this work.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Resistive switching in Pt/Ta2O5/TiN structure for nonvolatile memory application\",\"authors\":\"Jian-Yang Lin, Jyun-hao Chen\",\"doi\":\"10.1109/NMDC.2013.6707472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The bipolar resistive switching characteristics of the Ta<sub>2</sub>O<sub>5</sub>-based resistive random access memories with a Pt/Ta<sub>2</sub>O<sub>5</sub>/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 10<sup>5</sup> cycles under pulse switching operation and retention characteristics up to 10<sup>4</sup> s at room temperature have been achieved in this work.\",\"PeriodicalId\":112068,\"journal\":{\"name\":\"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2013.6707472\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2013.6707472","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistive switching in Pt/Ta2O5/TiN structure for nonvolatile memory application
The bipolar resistive switching characteristics of the Ta2O5-based resistive random access memories with a Pt/Ta2O5/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 105 cycles under pulse switching operation and retention characteristics up to 104 s at room temperature have been achieved in this work.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
