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引用次数: 4
摘要
采用器件矩阵阵列(DMA) TEG测量了散装和完全耗尽(FD) SOI mosfet的随机电报噪声(RTN)，并进行了统计分析。研究发现，在分布的尾部，RTN (ΔVth)在FD SOI mosfet中的阈值电压变化小于Bulk mosfet。三维器件模拟证实，当陷阱恰好处于随机掺杂波动(RDF)引起的沟道电位谷时，块体mosfet中ΔVth会变得非常大，而FD SOI mosfet中ΔVth变大的可能性很小，因为低杂质密度使得沟道电位曲线平滑。
Statistical comparison of random telegraph noise (RTN) in bulk and fully depleted SOI MOSFETs
Random telegraph noise (RTN) in bulk and fully depleted (FD) SOI MOSFETs are measured by device matrix array (DMA) TEG for statistical analysis. It is found that, in the tail part of the distribution, threshold voltage change by RTN (ΔVth) in FD SOI MOSFETs is smaller than that in Bulk MOSFETs. 3D device simulation confirms that ΔVth becomes very large in bulk MOSFETs when a trap happens to be in the valley of channel potential caused by random dopant fluctuation (RDF), while the possibility of large ΔVth is small in FD SOI MOSFETs because the channel potential profile is smooth due to low impurity density.
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