邻近缺陷对等离子体包覆塑料磁导率的影响

C. Hopmann, Stefan Wilski, Jens Wipperfuerth, F. Mitschker, P. Awakowicz, R. Dahlmann
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引用次数: 0

摘要

在食品和医药包装或太阳能技术中,塑料的渗透性是一个重要因素。使用塑料的原因是各种各样的优点,但另一方面,必须考虑到气体或蒸气的高渗透性,以减少质量运输。由于这个原因,该材料通常涂有高阻隔层,例如siox层,有效地减少了气体和蒸汽的渗透。实现屏障涂层的现有技术之一是PECVD技术,该技术通过将屏障膜从气态沉积到固态,在聚合物上生成几十纳米的薄膜。理论上,渗透减少应该比通常测量的要高得多。这是由于在PECVD过程中由于薄膜生长过程或聚合物上的污染而引起的屏障层缺陷造成的。在考虑相邻缺陷影响的情况下,对薄膜的渗透机理进行了大量的研究。通常定义了影响发生的距离,但没有描述影响本身。本文的重点是研究相邻缺陷的影响。假设非晶聚合物的渗透可以用菲克定律来描述。这需要了解缺陷和缺陷尺寸分布,这是通过蚀刻方法和随后的扫描电镜成像预先确定的。将从结果中导出一个临界缺陷间距参数和衰减函数来描述相邻缺陷的影响。结果表明,叠加原理是可行的。根据相邻缺陷的数量及其尺寸,可以描述单个缺陷的磁导率。在未来,通过缺陷的渗透将用分子动力学的方法来描述。第一步模拟的输出将是一个依赖于时间和缺陷尺寸的浓度函数,作为这里进行宏观模拟的输入。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of adjacent defects on the permeability of plasmapolymer coated plastics
Permeation through plastics is an important factor in food and medical packaging, or in solar technology. The cause for usage of plastics is the variety of advantages, but on the other hand, the high permeability for gases or vapours has to be taken into account to reduce the mass transport. For this reason, the material is often coated with high barrier layers, e.g. SiOx-layer, that effectively reduces the permeation of gases and vapours. One of the established technologies to realise barrier coatings is the PECVD technique, in which a thin film of a few ten nanometres is generated by depositing the barrier film from the gas state to the solid state on the polymer. In theory, the permeation reduction should be much higher than typically measured. This is caused by defects in the barrier layer that arise by reasons of the film growing process during PECVD or contaminations on the polymer. A lot of research has been done to describe the mechanisms of permeation through thin films under consideration of the influence of adjacent defects. Typically a distance was defined under which an influence occur, but the influence itself was not described. In this paper, the focus is on the influence of adjacent defects. Assuming an amorphous polymer the permeation can be described by the Fick’s-Law. This requires knowledge of the defect and defect-size distributions, which are predetermined by etching methods and subsequent SEM imaging. A critical defect spacing parameter and an attenuation function will be derived from the results to describe the influence of adjacent defects. The results show that a superposition principle can be applied. Depending on the number of adjacent defects and their size the permeability of an individually defect can be described. In the future, the permeation through defects will be described by a molecular dynamic approach. The output of the first step of the simulation will be a time and defect size dependent concentration function, which serves as input for here performed macroscopic simulation.
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