Ge pmosfet的NBTI:了解缺陷和实现寿命预测

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-15 DOI:10.1109/IEDM.2014.7047166

J. Ma, W. Zhang, J. F. Zhang, B. Benbakhti, Z. Ji, J. Mitard, J. Franco, B. Kaczer, G. Groeseneken

{"title":"Ge pmosfet的NBTI:了解缺陷和实现寿命预测","authors":"J. Ma, W. Zhang, J. F. Zhang, B. Benbakhti, Z. Ji, J. Mitard, J. Franco, B. Kaczer, G. Groeseneken","doi":"10.1109/IEDM.2014.7047166","DOIUrl":null,"url":null,"abstract":"Conventional lifetime prediction method developed for Si is inapplicable to Ge devices. This work demonstrates that the defects are different in Ge and Si devices. Based on the investigation of defect difference, for the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, enabling lifetime prediction. This method is applicable for both GeO2/Ge and Sicap/Ge devices, assisting in further Ge process/device optimization.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction\",\"authors\":\"J. Ma, W. Zhang, J. F. Zhang, B. Benbakhti, Z. Ji, J. Mitard, J. Franco, B. Kaczer, G. Groeseneken\",\"doi\":\"10.1109/IEDM.2014.7047166\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conventional lifetime prediction method developed for Si is inapplicable to Ge devices. This work demonstrates that the defects are different in Ge and Si devices. Based on the investigation of defect difference, for the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, enabling lifetime prediction. This method is applicable for both GeO2/Ge and Sicap/Ge devices, assisting in further Ge process/device optimization.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047166\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

传统的硅寿命预测方法不适用于锗器件。这项工作证明了锗和硅器件的缺陷是不同的。在缺陷差异研究的基础上，首次提出了一种Ge器件恢复NBTI动力学幂律的方法，实现了寿命预测。该方法适用于GeO2/Ge和Sicap/Ge器件，有助于进一步优化Ge工艺/器件。

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NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction

Conventional lifetime prediction method developed for Si is inapplicable to Ge devices. This work demonstrates that the defects are different in Ge and Si devices. Based on the investigation of defect difference, for the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, enabling lifetime prediction. This method is applicable for both GeO2/Ge and Sicap/Ge devices, assisting in further Ge process/device optimization.

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2014 IEEE International Electron Devices Meeting

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