{"title":"在时域内分析频率乘法器的变容器模型","authors":"E. G. Kasatkina, L.G. Lavsky","doi":"10.1109/MIAME.1999.827809","DOIUrl":null,"url":null,"abstract":"A model of a multiplier microwave diode is considered which is received on the basis of updating of Agahanyn's model for a bipolar transistor. The model consists of a linear and nonlinear part, that simplifies its use on the analysis of varactor multiplier of frequency in the time area.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The model of varactor for the analysis of a multiplier of frequency in the time domain\",\"authors\":\"E. G. Kasatkina, L.G. Lavsky\",\"doi\":\"10.1109/MIAME.1999.827809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model of a multiplier microwave diode is considered which is received on the basis of updating of Agahanyn's model for a bipolar transistor. The model consists of a linear and nonlinear part, that simplifies its use on the analysis of varactor multiplier of frequency in the time area.\",\"PeriodicalId\":132112,\"journal\":{\"name\":\"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIAME.1999.827809\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIAME.1999.827809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The model of varactor for the analysis of a multiplier of frequency in the time domain
A model of a multiplier microwave diode is considered which is received on the basis of updating of Agahanyn's model for a bipolar transistor. The model consists of a linear and nonlinear part, that simplifies its use on the analysis of varactor multiplier of frequency in the time area.