相变存储器:扩展和应用

R. Jeyasingh, Jiale Liang, Marissa Caldwell, D. Kuzum, H. Wong
{"title":"相变存储器:扩展和应用","authors":"R. Jeyasingh, Jiale Liang, Marissa Caldwell, D. Kuzum, H. Wong","doi":"10.1109/CICC.2012.6330621","DOIUrl":null,"url":null,"abstract":"Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8-3.4nm has been demonstrated. Highly scaled (<;2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Phase Change Memory: Scaling and applications\",\"authors\":\"R. Jeyasingh, Jiale Liang, Marissa Caldwell, D. Kuzum, H. Wong\",\"doi\":\"10.1109/CICC.2012.6330621\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8-3.4nm has been demonstrated. Highly scaled (<;2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.\",\"PeriodicalId\":130434,\"journal\":{\"name\":\"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2012.6330621\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2012.6330621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

摘要

相变存储器(PCM)技术是未来非易失性存储器应用的一个有前途的候选人。利用纳米制造技术的新应用证明了PCM在亚10nm范围内的缩放。采用溶液处理的直径范围为1.8-3.4nm的GeTe纳米颗粒制备了PCM器件。制备了以碳纳米管为电极的高尺度(< 2nm) PCM交叉点器件,证明了PCM在超小尺寸上的可扩展性。作为神经形态计算的纳米电子突触,PCM的使用也被证明是PCM在数字记忆之外应用的一个例证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phase Change Memory: Scaling and applications
Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8-3.4nm has been demonstrated. Highly scaled (<;2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信