探索隧道场效应管的超低功率模拟应用:以运算跨导放大器为例

A. Trivedi, S. Carlo, S. Mukhopadhyay
{"title":"探索隧道场效应管的超低功率模拟应用:以运算跨导放大器为例","authors":"A. Trivedi, S. Carlo, S. Mukhopadhyay","doi":"10.1145/2463209.2488868","DOIUrl":null,"url":null,"abstract":"This work studies the potentials and challenges of designing ultra low-power analog circuits exploiting unique characteristics of Tunnel-FET (TFET). TFET can achieve ultra-low quiescent current (~pA). In the subthreshold operation, TFET exhibit subthreshold swing lower than 60mV/decade, and hence higher transconductance per bias current than the MOSFET. TFET also exhibit very weak temperature dependence, and higher output resistance. Among several challenges, TFET demonstrate higher Shot noise at low biasing current. Through design of TFET based Operational Transconductance Amplifier (OTA) these challenges and opportunities are discussed. For implantable bio-medical applications, TFET OTA based neural amplifier design is studied.","PeriodicalId":320207,"journal":{"name":"2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"90","resultStr":"{\"title\":\"Exploring Tunnel-FET for ultra low power analog applications: A case study on operational transconductance amplifier\",\"authors\":\"A. Trivedi, S. Carlo, S. Mukhopadhyay\",\"doi\":\"10.1145/2463209.2488868\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work studies the potentials and challenges of designing ultra low-power analog circuits exploiting unique characteristics of Tunnel-FET (TFET). TFET can achieve ultra-low quiescent current (~pA). In the subthreshold operation, TFET exhibit subthreshold swing lower than 60mV/decade, and hence higher transconductance per bias current than the MOSFET. TFET also exhibit very weak temperature dependence, and higher output resistance. Among several challenges, TFET demonstrate higher Shot noise at low biasing current. Through design of TFET based Operational Transconductance Amplifier (OTA) these challenges and opportunities are discussed. For implantable bio-medical applications, TFET OTA based neural amplifier design is studied.\",\"PeriodicalId\":320207,\"journal\":{\"name\":\"2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"90\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2463209.2488868\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2463209.2488868","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 90

摘要

本文研究了利用隧道场效应管(TFET)的独特特性设计超低功耗模拟电路的潜力和挑战。可以实现超低的静态电流(~pA)。在亚阈值工作中,TFET表现出低于60mV/ 10的亚阈值摆幅,因此每个偏置电流的跨导比MOSFET高。TFET还表现出非常弱的温度依赖性和更高的输出电阻。在诸多挑战中,在低偏置电流下,TFET表现出较高的散粒噪声。通过设计基于TFET的运算跨导放大器(OTA),讨论了这些挑战和机遇。针对植入式生物医学应用,研究了基于TFET OTA的神经放大器设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploring Tunnel-FET for ultra low power analog applications: A case study on operational transconductance amplifier
This work studies the potentials and challenges of designing ultra low-power analog circuits exploiting unique characteristics of Tunnel-FET (TFET). TFET can achieve ultra-low quiescent current (~pA). In the subthreshold operation, TFET exhibit subthreshold swing lower than 60mV/decade, and hence higher transconductance per bias current than the MOSFET. TFET also exhibit very weak temperature dependence, and higher output resistance. Among several challenges, TFET demonstrate higher Shot noise at low biasing current. Through design of TFET based Operational Transconductance Amplifier (OTA) these challenges and opportunities are discussed. For implantable bio-medical applications, TFET OTA based neural amplifier design is studied.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信