先进的扇形圆片级封装开发小尺寸和高性能微控制器应用

G. Sharma, N. Lakhera, Mollie Benson, A. Mawer
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引用次数: 3

摘要

在过去的几年中,扇形圆片级封装(FOWLP)在具有小尺寸要求的产品应用中获得了显著的吸引力和行业认可。有不同的FOWLP口味在大批量生产。用于手机应用处理器的高密度FOWLP具有多金属层互连的硅封装集成工艺流程。传统的FOWLP仅限于用于RF, Wi-Fi,编解码器,PMIC,汽车雷达应用的单或双金属层互连。在这项研究中,我们评估了一个使用传统FOWLP工艺流程和多金属层互连微控制器(MCU)应用的封装。采用广泛的前端-后端工艺失效模式及影响分析(FMEA)和优化,实现了先进硅产品良好的装配工艺质量、制造性能和可靠性。为了满足与激光槽深度和轮廓相关的不同在线工艺质量规范,开发了圆片研磨、激光槽和机械锯的模具预组装工艺,并在划线线、上侧面、背面、侧壁无金属屑。对包括不同封装互连层堆叠、介电材料和焊料合金在内的实验腿设计进行了评估,以获得通过JEDEC产品可靠性认证标准的最佳材料清单组合。测试条件包括:高加速测试(110°C/85%/3.3V, 528小时),高温储存寿命(150°C, 2000小时),应用级温度循环((- 40°C至125°C, 600循环),板级温度循环(- 40°C至125°C, 500循环)和板级跌落测试(1500g/0.5ms, 30滴)。焊料合金的最佳选择和封装再分配层的堆叠导致了优异的可靠性性能和各级互连(硅封装板)的合格性和成功的芯片封装集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Fan Out Wafer Level Package Development for Small form Factor and High-Performance Microcontroller Applications
Over the last few years fan out wafer level packages (FOWLP) have gained significant traction and industry acceptance in product applications that have small form factor requirements. There are different FOWLP flavors that are in high volume production. High density FOWLP that are used for mobile phone application processors have silicon-package integrated process flow with multiple metal layer interconnects. Conventional FOWLP are limited to single or two metal layer interconnects that are used for RF, Wi-Fi, Codec, PMIC, automotive radar applications. In this study a package was evaluated that uses conventional FOWLP process flow with multiple metal layer interconnect for microcontroller (MCU) applications. Extensive front end-back end process Failure Modes and Effects Analysis (FMEA) and optimization were employed to achieve good assembly process quality, manufacturing performance and reliability for the advanced silicon product. The die pre-assembly process of wafer grind, laser groove, and mechanical saw was developed to meet different in line process quality specs related to laser groove depth and profile, no metal debris in scribe line, top side, back side, side wall chipping. Design of Experiment (DOE) legs including different package interconnect layer stack ups, dielectric materials, and solder alloys were evaluated to achieve optimum bill of material combinations that passed JEDEC standards for product reliability qualification. The conditions tested included: Highly Accelerated Test (110°C/85%/3.3V, 528 hours), High Temperature Storage Life (150°C, 2000 hours), Application Level Temperature Cycling ((−40 °C to 125 °C, 600 cycles), Board Level Temp Cycling (−40 °C to 125 °C, 500 cycles) and Board Level Drop Test (1500g/0.5ms, 30 drops). Optimum choice of solder alloy and package redistribution layer stack up led to excellent reliability performance and qualification for all levels of interconnects (silicon-package-board) and successful chip package integration.
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