S. A. Cabanas-Tay, A. Morales-Sánchez, L. Palacios-Huerta, M. Aceves-Mijares
{"title":"ITO/SRO/p-Si和ITO/SRN/SRO/p-Si结构的紫外电致发光","authors":"S. A. Cabanas-Tay, A. Morales-Sánchez, L. Palacios-Huerta, M. Aceves-Mijares","doi":"10.1109/ICEEE.2016.7751235","DOIUrl":null,"url":null,"abstract":"This work presents the electrical and electroluminescent properties of light emitting capacitors (LECs) using silicon rich oxide (SRO) and the effect of a thin silicon rich nitride (SRN) film on it (SRN/SRO) as active layers. LECs were fabricated using simple Metal-Insulator-Semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. All devices exhibit a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense ultraviolet-blue (UV-B) EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm are clearly observed once the low conduction state is reached. The red-near infrared EL at HCS is similar to the PL spectra indicating the same radiative process is involved. An increment of the EL band at ~590 nm in SRN/SRO is observed at both conduction states. This band has been observed before and attributed transitions from the minimum band conduction to K0 centers in SRN films. The UV-B emission appears at lower electric field when the SRN/SRO film is used as active layer.","PeriodicalId":285464,"journal":{"name":"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"UV electroluminescence from ITO/SRO/p-Si and ITO/SRN/SRO/p-Si structures\",\"authors\":\"S. A. Cabanas-Tay, A. Morales-Sánchez, L. Palacios-Huerta, M. Aceves-Mijares\",\"doi\":\"10.1109/ICEEE.2016.7751235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the electrical and electroluminescent properties of light emitting capacitors (LECs) using silicon rich oxide (SRO) and the effect of a thin silicon rich nitride (SRN) film on it (SRN/SRO) as active layers. LECs were fabricated using simple Metal-Insulator-Semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. All devices exhibit a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense ultraviolet-blue (UV-B) EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm are clearly observed once the low conduction state is reached. The red-near infrared EL at HCS is similar to the PL spectra indicating the same radiative process is involved. An increment of the EL band at ~590 nm in SRN/SRO is observed at both conduction states. This band has been observed before and attributed transitions from the minimum band conduction to K0 centers in SRN films. The UV-B emission appears at lower electric field when the SRN/SRO film is used as active layer.\",\"PeriodicalId\":285464,\"journal\":{\"name\":\"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEEE.2016.7751235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE.2016.7751235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
UV electroluminescence from ITO/SRO/p-Si and ITO/SRN/SRO/p-Si structures
This work presents the electrical and electroluminescent properties of light emitting capacitors (LECs) using silicon rich oxide (SRO) and the effect of a thin silicon rich nitride (SRN) film on it (SRN/SRO) as active layers. LECs were fabricated using simple Metal-Insulator-Semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. All devices exhibit a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense ultraviolet-blue (UV-B) EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm are clearly observed once the low conduction state is reached. The red-near infrared EL at HCS is similar to the PL spectra indicating the same radiative process is involved. An increment of the EL band at ~590 nm in SRN/SRO is observed at both conduction states. This band has been observed before and attributed transitions from the minimum band conduction to K0 centers in SRN films. The UV-B emission appears at lower electric field when the SRN/SRO film is used as active layer.