ITO/SRO/p-Si和ITO/SRN/SRO/p-Si结构的紫外电致发光

S. A. Cabanas-Tay, A. Morales-Sánchez, L. Palacios-Huerta, M. Aceves-Mijares
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引用次数: 1

摘要

本文介绍了富氧化硅(SRO)发光电容器(LECs)的电学和电致发光特性,以及富氮化硅薄膜(SRN/SRO)作为有源层对其的影响。采用简单的金属-绝缘体-半导体(MIS)结构,分别以氧化铟锡(ITO)和铝作为栅极和衬底电极制备了LECs。所有器件都表现出从高导态(HCS)到低导态(LCS)的电阻切换(RS)行为,增强了强烈的紫外-蓝(UV-B) EL。这种RS行为在活性层和可能在ITO接触中产生结构变化。在~250、270、285、305、325、415和450 nm处明显观察到半峰宽度为7±0.6 nm的7条窄带。HCS的红-近红外光谱与PL光谱相似,表明涉及相同的辐射过程。在两种导通状态下,SRN/SRO的EL带在~590 nm处都有增加。这个带以前已经被观察到,并归因于SRN薄膜中从最小带导到K0中心的转变。当SRN/SRO薄膜用作有源层时,在较低的电场下出现UV-B发射。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
UV electroluminescence from ITO/SRO/p-Si and ITO/SRN/SRO/p-Si structures
This work presents the electrical and electroluminescent properties of light emitting capacitors (LECs) using silicon rich oxide (SRO) and the effect of a thin silicon rich nitride (SRN) film on it (SRN/SRO) as active layers. LECs were fabricated using simple Metal-Insulator-Semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. All devices exhibit a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense ultraviolet-blue (UV-B) EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm are clearly observed once the low conduction state is reached. The red-near infrared EL at HCS is similar to the PL spectra indicating the same radiative process is involved. An increment of the EL band at ~590 nm in SRN/SRO is observed at both conduction states. This band has been observed before and attributed transitions from the minimum band conduction to K0 centers in SRN films. The UV-B emission appears at lower electric field when the SRN/SRO film is used as active layer.
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