高可靠的物理不可克隆功能与隧道传导忆阻交叉棒

Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, M. Song, S. Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim
{"title":"高可靠的物理不可克隆功能与隧道传导忆阻交叉棒","authors":"Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, M. Song, S. Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim","doi":"10.1109/IEDM45625.2022.10019539","DOIUrl":null,"url":null,"abstract":"In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent $I-V$ properties. A strong PUF with a large $(\\sim 10 ^{17})$ number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated ~50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction\",\"authors\":\"Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, M. Song, S. Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim\",\"doi\":\"10.1109/IEDM45625.2022.10019539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent $I-V$ properties. A strong PUF with a large $(\\\\sim 10 ^{17})$ number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated ~50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.\",\"PeriodicalId\":275494,\"journal\":{\"name\":\"2022 International Electron Devices Meeting (IEDM)\",\"volume\":\"275 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM45625.2022.10019539\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM45625.2022.10019539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在这项工作中,我们提出了使用al2o3 /TiOx记忆电阻交叉棒阵列的原始状态的高可靠的物理不可克隆函数(PUF)操作。该器件堆栈在化学计量学和厚度方面进行了优化,以获得与温度无关的$I-V$性质。基于交叉条证明了一个具有大$(\sim 10 ^{17})$挑战响应对数的强PUF,并且由于隧道传导,在不采用校正方法的情况下,实验验证了误码率(BER)小于1%(80°C时为0.896%)。此外,PUF的均匀性、扩散性和唯一性得到了50%的评价,并通过NIST测试和机器学习攻击验证了其随机性,验证了PUF的鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction
In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent $I-V$ properties. A strong PUF with a large $(\sim 10 ^{17})$ number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated ~50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信