新的多层分层布局密度控制算法

A. Kahng, G. Robins, Anish Singh, A. Zelikovsky
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引用次数: 11

摘要

在极深亚微米VLSI中,某些制造步骤涉及化学机械抛光(CIMP),这对器件和互连特性有不同的影响,取决于局部布局特性。为了减少由于CMP造成的制造变化,并提高产量和性能的可预测性,需要通过在布局中插入“填充”几何形状,使布局按照一定的密度标准保持一致。本文提出了一种有效的多层密度分析方法,可提供用户可调的精度。我们还开发了基于多层分析与线性规划方法相结合的精确填充综合解决方案。我们的方法既适用于平面设计,也适用于分层设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New multilevel and hierarchical algorithms for layout density control
Certain manufacturing steps in very deep submicron VLSI involve chemical-mechanical polishing (CIMP) which has varying effects on device and interconnect features, depending on local layout characteristics. To reduce manufacturing variation due to CMP and to improve yield and performance predictability, the layout needs to be made uniform with respect to certain density criteria, by inserting "fill" geometries into the layout. This paper presents an efficient multilevel approach to density analysis that affords user-tunable accuracy. We also develop exact fill synthesis solutions based on combining multilevel analysis with a linear programming approach. Our methods apply to both flat and hierarchical designs.
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