隧道场效应管超低功耗电路设计

Ravindhiran Mukundrajan, M. Cotter, V. Saripalli, M. J. Irwin, S. Datta, N. Vijaykrishnan
{"title":"隧道场效应管超低功耗电路设计","authors":"Ravindhiran Mukundrajan, M. Cotter, V. Saripalli, M. J. Irwin, S. Datta, N. Vijaykrishnan","doi":"10.1109/ISVLSI.2012.70","DOIUrl":null,"url":null,"abstract":"The proliferation of ubiquitous and mobile computing systems has created a new segment in the design space where energy efficiency is the most critical design parameter. With the end user expecting more functionality from these types of systems, there is a pressing need to evaluate emerging technologies that can overcome the limitations of CMOS. This work evaluates the potential of one such prospective MOSFET replacement device - the Tunnel FET (TFET). Novel circuit designs are presented to overcome unique design challenges posed by TFETs. The impacts of the proposed design techniques are characterized and a sparse prefix tree adder employing the proposed designs is presented. A considerable improvement in delay and significant reduction in energy is observed due to the combined impact of circuit and technology co-exploration.","PeriodicalId":398850,"journal":{"name":"2012 IEEE Computer Society Annual Symposium on VLSI","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":"{\"title\":\"Ultra Low Power Circuit Design Using Tunnel FETs\",\"authors\":\"Ravindhiran Mukundrajan, M. Cotter, V. Saripalli, M. J. Irwin, S. Datta, N. Vijaykrishnan\",\"doi\":\"10.1109/ISVLSI.2012.70\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The proliferation of ubiquitous and mobile computing systems has created a new segment in the design space where energy efficiency is the most critical design parameter. With the end user expecting more functionality from these types of systems, there is a pressing need to evaluate emerging technologies that can overcome the limitations of CMOS. This work evaluates the potential of one such prospective MOSFET replacement device - the Tunnel FET (TFET). Novel circuit designs are presented to overcome unique design challenges posed by TFETs. The impacts of the proposed design techniques are characterized and a sparse prefix tree adder employing the proposed designs is presented. A considerable improvement in delay and significant reduction in energy is observed due to the combined impact of circuit and technology co-exploration.\",\"PeriodicalId\":398850,\"journal\":{\"name\":\"2012 IEEE Computer Society Annual Symposium on VLSI\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-08-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"37\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Computer Society Annual Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2012.70\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2012.70","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 37

摘要

无处不在的移动计算系统的扩散已经在设计空间中创造了一个新的部分,其中能源效率是最关键的设计参数。随着终端用户期望从这些类型的系统中获得更多的功能,迫切需要评估能够克服CMOS局限性的新兴技术。这项工作评估了一种有前景的MOSFET替代器件-隧道场效应管(TFET)的潜力。提出了新颖的电路设计,以克服tfet带来的独特设计挑战。对所提设计技术的影响进行了表征,并提出了采用所提设计的稀疏前缀树加法器。由于电路和技术共同开发的综合影响,观察到延迟的显著改善和能源的显著减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra Low Power Circuit Design Using Tunnel FETs
The proliferation of ubiquitous and mobile computing systems has created a new segment in the design space where energy efficiency is the most critical design parameter. With the end user expecting more functionality from these types of systems, there is a pressing need to evaluate emerging technologies that can overcome the limitations of CMOS. This work evaluates the potential of one such prospective MOSFET replacement device - the Tunnel FET (TFET). Novel circuit designs are presented to overcome unique design challenges posed by TFETs. The impacts of the proposed design techniques are characterized and a sparse prefix tree adder employing the proposed designs is presented. A considerable improvement in delay and significant reduction in energy is observed due to the combined impact of circuit and technology co-exploration.
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