基于全区域电流的PHEMT直流经验模型

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678) Pub Date : 2003-11-17 DOI:10.1109/IMOC.2003.1244839

J. Gao, X. Li, H. Wang, G. Boeck

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引用次数: 4

摘要

本文提出了一种改进的高、低电流双异质结构PHEMT直流模型，并对0.25(1 /spl倍/ 40)/spl μ m双异质结构PHEMT的模拟结果与实测结果吻合较好。

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Empirical all region current based PHEMT DC model

This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 /spl times/ 40) /spl mu/m double heterostructure PHEMT.

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来源期刊

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)

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