软开关变换器中IGBT的计算机仿真与设计优化

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583664

I. Widjaja, A. Kurnia, D. Divan, K. Shenai

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引用次数: 11

摘要

下一代功率半导体器件将被设计和优化以满足特定的应用要求。谐振直流链路的概念在各种软开关应用中越来越受欢迎，因为它具有优越的功率转换效率和提高整体系统的可靠性。采用混合模式仿真研究了软开关和硬开关条件下非穿孔IGBT结构关断过程中的载流子动力学。仿真结果表明，在不同的输出dv/dt条件下，可以定性地预测尾电流的测量起伏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Computer simulation and design optimization of IGBT's in soft-switching converters

The next generation of power semiconductor devices will be designed and optimized to meet the specific application requirements. Resonant dc link concept is gaining wide popularity in a range of soft-switching applications because of superior power conversion efficiency and improved overall system reliability. Mixed-mode simulations are used to study the carrier dynamics in non punchthrough IGBT structures during turn-off under soft- and hard-switching conditions. The simulation results are shown to qualitatively predict the measured bump in the tail current with varying output dv/dt conditions.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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