硅纳米隧道二极管中共掺杂诱导的隧道电流增强及其相互作用

M. Muruganathan, D. Moraru, M. Tabe, H. Mizuta
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引用次数: 1

摘要

我们报道了超薄硅隧道二极管的负差分电导(NDC)是由室温下的过量电流主导的。这是由于pn结中共掺杂引起的间隙态。第一性原理模拟表明,共掺杂在pn结区域的存在导致带间隧穿电流增加了两个数量级。此外,共掺杂的相互作用在带间隧穿中起着关键作用。在pn结区没有掺杂态的情况下,提高源区掺杂浓度对隧穿电流没有明显的改善作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Co-dopants induced tunnel-current enhancement and their interaction in silicon nano tunnel diode
We report for ultra-thin Si tunnelling diodes that negative differential conductance (NDC) is dominated by the excess current at room temperature. This is attributed to the gap-states induced by the co-dopants in the pn junction. First-principles simulation shows that the presence of co-dopants in the pn junction region leads to an increase in the interband tunnelling current by two orders of magnitude. Furthermore co-dopants interaction plays a key role in the interband tunnelling. In the absence of dopants states in the pn junction region, raising the doping concentration at source region does not give an appreciable improvement in tunnelling current.
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