A. Aryal, Ravi Kiran Chityala, I. Stricklin, Sidhant Tiwari, A. Siddiqui, T. Busani
{"title":"铌酸锂薄膜光滑垂直刻蚀轮廓的高q Lamb波谐振器的实现","authors":"A. Aryal, Ravi Kiran Chityala, I. Stricklin, Sidhant Tiwari, A. Siddiqui, T. Busani","doi":"10.1117/12.2665860","DOIUrl":null,"url":null,"abstract":"In this work, Lamb Wave Resonators (LWRs) based on 2 μm thin Y-cut LiNbO3 films have been fabricated using integrated fabrication process that defines IDTs (Inter Digital Transducers) on top surface and a partial Si cavity for a sacrificial layer on the bottom surface. We discuss the etch quality and its effects on the device's performance. For the first time, we present an optimized high-quality etched MEMS (Micro-electromechanical Systems) Resonator with smooth and vertical sidewalls on this material system, reporting the maximum Q-factor of 2500 at 846 MHz frequency. We observed that the resonator system has a Q-factor of 480 over the same frequency range when the etched surface has significant roughness and non-verticality. Q values of the device are greatly diminished by the presence of surface roughness and non-verticality of the etched edges. This truly highlights how important it is to have a high-quality etch profile for a piezoelectric material system like this so that the designed resonators can perform at their best.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"12497 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Realization of high-Q Lamb wave resonator with smooth vertical etching profile for thin film lithium niobate\",\"authors\":\"A. Aryal, Ravi Kiran Chityala, I. Stricklin, Sidhant Tiwari, A. Siddiqui, T. Busani\",\"doi\":\"10.1117/12.2665860\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, Lamb Wave Resonators (LWRs) based on 2 μm thin Y-cut LiNbO3 films have been fabricated using integrated fabrication process that defines IDTs (Inter Digital Transducers) on top surface and a partial Si cavity for a sacrificial layer on the bottom surface. We discuss the etch quality and its effects on the device's performance. For the first time, we present an optimized high-quality etched MEMS (Micro-electromechanical Systems) Resonator with smooth and vertical sidewalls on this material system, reporting the maximum Q-factor of 2500 at 846 MHz frequency. We observed that the resonator system has a Q-factor of 480 over the same frequency range when the etched surface has significant roughness and non-verticality. Q values of the device are greatly diminished by the presence of surface roughness and non-verticality of the etched edges. This truly highlights how important it is to have a high-quality etch profile for a piezoelectric material system like this so that the designed resonators can perform at their best.\",\"PeriodicalId\":212235,\"journal\":{\"name\":\"Advanced Lithography\",\"volume\":\"12497 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2665860\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2665860","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Realization of high-Q Lamb wave resonator with smooth vertical etching profile for thin film lithium niobate
In this work, Lamb Wave Resonators (LWRs) based on 2 μm thin Y-cut LiNbO3 films have been fabricated using integrated fabrication process that defines IDTs (Inter Digital Transducers) on top surface and a partial Si cavity for a sacrificial layer on the bottom surface. We discuss the etch quality and its effects on the device's performance. For the first time, we present an optimized high-quality etched MEMS (Micro-electromechanical Systems) Resonator with smooth and vertical sidewalls on this material system, reporting the maximum Q-factor of 2500 at 846 MHz frequency. We observed that the resonator system has a Q-factor of 480 over the same frequency range when the etched surface has significant roughness and non-verticality. Q values of the device are greatly diminished by the presence of surface roughness and non-verticality of the etched edges. This truly highlights how important it is to have a high-quality etch profile for a piezoelectric material system like this so that the designed resonators can perform at their best.