{"title":"应变对量子阱中无阈值俄歇复合的影响","authors":"A. Andreev, G. Zegrya","doi":"10.1109/SMICND.1996.557387","DOIUrl":null,"url":null,"abstract":"Effect of strain on thresholdless Auger recombination processes in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of the particles has been carried out. It is shown that the strain both qualitatively and quantitatively affects the overlap integral between the electron and hole states. It is demonstrated that the Auger recombination rate decreases as compressive strain increases.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of strain on thresholdless Auger recombination in quantum wells\",\"authors\":\"A. Andreev, G. Zegrya\",\"doi\":\"10.1109/SMICND.1996.557387\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effect of strain on thresholdless Auger recombination processes in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of the particles has been carried out. It is shown that the strain both qualitatively and quantitatively affects the overlap integral between the electron and hole states. It is demonstrated that the Auger recombination rate decreases as compressive strain increases.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557387\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of strain on thresholdless Auger recombination in quantum wells
Effect of strain on thresholdless Auger recombination processes in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of the particles has been carried out. It is shown that the strain both qualitatively and quantitatively affects the overlap integral between the electron and hole states. It is demonstrated that the Auger recombination rate decreases as compressive strain increases.
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