R. Bez, S. Bossi, B. Gleixner, F. Pellizzer, A. Pirovano, G. Servalli, M. Tosi
{"title":"相变存储器的发展趋势","authors":"R. Bez, S. Bossi, B. Gleixner, F. Pellizzer, A. Pirovano, G. Servalli, M. Tosi","doi":"10.1109/IMW.2010.5488398","DOIUrl":null,"url":null,"abstract":"At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base [1]. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"1958 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Phase Change Memory development trends\",\"authors\":\"R. Bez, S. Bossi, B. Gleixner, F. Pellizzer, A. Pirovano, G. Servalli, M. Tosi\",\"doi\":\"10.1109/IMW.2010.5488398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base [1]. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade.\",\"PeriodicalId\":149628,\"journal\":{\"name\":\"2010 IEEE International Memory Workshop\",\"volume\":\"1958 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Memory Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2010.5488398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base [1]. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade.