122ghz低噪声放大放大技术

W. Winkler, W. Debski, B. Heinemann, F. Korndörfer, H. Rücker, K. Schmalz, C. Scheytt, B. Tillack
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引用次数: 18

摘要

介绍了采用SiGe BiCMOS技术制备的两种122ghz低噪声放大器。放大器的设计利用了一种新颖的传输线结构,在MMIC的顶部有厚金属接地屏蔽。该电路采用两级级联码拓扑结构,利用传输线进行输入、输出和级间匹配。该放大器具有高增益、最小噪声和低功耗的特点。测量结果显示,在122 GHz时,增益为13.5 dB,噪声系数为9.6 dB。3.5伏电源的功耗为52mW。另一种LNA的输出端是变压器耦合,而不是电容耦合,其增益略低。该放大器适用于ism波段雷达和通信系统、宽带通信系统和雷达成像系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
122 GHz low-noise-amplifier in sige technology
The paper presents two types of 122 GHz low-noise-amplifiers (LNA) fabricated in SiGe BiCMOS technology. The amplifier design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifiers are designed for high gain, minimum noise figure and low power consumption. Measurements show a gain of 13.5 dB and a noise figure of 9.6 dB at 122 GHz. The power consumption is 52mW from a 3.5 Volt supply. The other version of the LNA with transformer coupling to the output instead of capacitive coupling has slightly lower gain. The amplifier is intended for the use in ISM-band radar and communication systems, wide-band communication systems and in radar imaging systems.
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