高度可制造的单桥通道MOSFET (SBCFET)

2006 IEEE International Conference on IC Design and Technology Pub Date : 2006-08-14 DOI:10.1109/ICICDT.2006.220811

S. Lee, Min-Sang Kim, E. Yoon, Sung-min Kim, Lian Jun, Dong-Won Kim, Donggun Park

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引用次数: 3

摘要

通过对多桥通道MOSFET (MBCFET)工艺的改进，成功制备了单桥通道MOSFET (SBCFET)。由于减少了外延生长步骤和简单的离子注入工艺，SBCFET具有与传统平面晶体管一样具有制造价值的简单制造工艺。SBCFET的电流可驱动性在1.0 V工作时显示2.0 mA/mum @ 100 pA/mum的关断电流

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Highly Manufacturable Single-Bridge-Channel MOSFET (SBCFET)

Modifying the multi-bridge-channel MOSFET (MBCFET) process, we have successfully fabricated single-bridge-channel MOSFET (SBCFET). Due to reduced epitaxial growth steps and simple ion implantation process, the SBCFET has manufacture-worthy simple fabrication process like conventional planar transistor. The current drivability of SBCFET shows 2.0 mA/mum @ 100 pA/mum off-current in 1.0 V operation

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来源期刊

2006 IEEE International Conference on IC Design and Technology

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