一种1.2 V 300 μW二阶开关电容Δ∑调制器,采用超不完全沉淀,SNDR为73 dB, BW为300 kHz

Blazej Nowacki, N. Paulino, J. Goes
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引用次数: 11

摘要

提出了一种基于超不完全沉降(UIS)实现离散时间滤波器的Δ∑调制器(Δ∑M)电路。这种方法允许建立一个Δ∑M,主要使用动态元素,从而减少功耗。利用该技术设计了一个二阶Δ∑M电路原型,并采用130 nm CMOS工艺;实测结果证明了该概念的有效性。测量结果表明,对于带宽为300 kHz的信号,Δ∑M的峰值SNDR为72.8 dB,峰值SNR为73.9 dB, DR为78.2 dB,而在1.2V电源电压下的功耗小于300 μW, FOM为139.3 fJ/ v.-step。据作者所知,该电路代表了第一个基于UIS的开关电容(SC)电路原型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.2 V 300 μW second-order switched-capacitor Δ∑ modulator using ultra incomplete settling with 73 dB SNDR and 300 kHz BW in 130 nm CMOS
This paper presents a Δ∑ modulator (Δ∑M) circuit based on the implementation of discrete time filters using ultra incomplete settling (UIS). This approach allows building a Δ∑M using mostly dynamic elements thus reducing the power dissipation. A prototyped 2nd-order Δ∑M circuit, using this technique, was designed in a 130 nm CMOS technology; the measured results prove the validity of the concept. Measured results show that the Δ∑M achieves a peak SNDR of 72.8 dB, a peak SNR of 73.9 dB and a DR of 78.2 dB for a signal with a bandwidth (BW) of 300 kHz, while dissipating less than 300 μW from a 1.2V power supply voltage, resulting in a FOM of 139.3 fJ/conv.-step. As far as the authors have knowledge, this circuit represents the first prototyped switched-capacitor (SC) circuit based on UIS.
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