高f/sub / T/的npn SiGe基HBTs中低掺杂集电极穿孔对基的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786138

Deyi Kong, Y. Li, Tongli Wei, Weidong Nie, W. Qian

{"title":"高f/sub / T/的npn SiGe基HBTs中低掺杂集电极穿孔对基的影响","authors":"Deyi Kong, Y. Li, Tongli Wei, Weidong Nie, W. Qian","doi":"10.1109/ICSICT.1998.786138","DOIUrl":null,"url":null,"abstract":"In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high f/sub T/\",\"authors\":\"Deyi Kong, Y. Li, Tongli Wei, Weidong Nie, W. Qian\",\"doi\":\"10.1109/ICSICT.1998.786138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.786138\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.786138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，我们给出了具有低掺杂穿孔式集电极的SiGe基极HBTs的集电极空间-电荷区宽度的定量表达式。计算结果表明，在不穿孔和穿孔之间的临界点处出现了不连续。讨论了不连续性对基频性能的影响，所得结论也适用于Si-BJTs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high f/sub T/

In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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