{"title":"双相18V 280μA电荷泵,带有源开关和无源电平移档器,用于低压高密度电容器","authors":"V. Michal, D. Cottin, Nicolas Marty, P. Arno","doi":"10.1109/NEWCAS.2015.7182026","DOIUrl":null,"url":null,"abstract":"This paper describes the implementation of a high-output current charge pump with passive level shifters, aiming the reliable driving of internal active switches. The technique described here enables advantageous use of high-density integrated Metal-Insulator-Metal (MIM) capacitors with low breakdown voltage, and active switches (MOS transistors). This enables to obtain high power density integration. In addition, capacitor area optimization and feedback control allowing generate constant output voltage are discussed. The 10MHz charge pump was integrated in 0.13μm CMOS process. Thanks to extra epitaxial trench isolation, 18V output voltage with the output current ranging up to 280μA is reached. The target application is the quadrature/frequency compensation of a 3-axis vibratory MEMS Gyroscope.","PeriodicalId":404655,"journal":{"name":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dual-phase 18V 280μA charge pump with active switches and passive level shifter for low-voltage high-density capacitors\",\"authors\":\"V. Michal, D. Cottin, Nicolas Marty, P. Arno\",\"doi\":\"10.1109/NEWCAS.2015.7182026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the implementation of a high-output current charge pump with passive level shifters, aiming the reliable driving of internal active switches. The technique described here enables advantageous use of high-density integrated Metal-Insulator-Metal (MIM) capacitors with low breakdown voltage, and active switches (MOS transistors). This enables to obtain high power density integration. In addition, capacitor area optimization and feedback control allowing generate constant output voltage are discussed. The 10MHz charge pump was integrated in 0.13μm CMOS process. Thanks to extra epitaxial trench isolation, 18V output voltage with the output current ranging up to 280μA is reached. The target application is the quadrature/frequency compensation of a 3-axis vibratory MEMS Gyroscope.\",\"PeriodicalId\":404655,\"journal\":{\"name\":\"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2015.7182026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2015.7182026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-phase 18V 280μA charge pump with active switches and passive level shifter for low-voltage high-density capacitors
This paper describes the implementation of a high-output current charge pump with passive level shifters, aiming the reliable driving of internal active switches. The technique described here enables advantageous use of high-density integrated Metal-Insulator-Metal (MIM) capacitors with low breakdown voltage, and active switches (MOS transistors). This enables to obtain high power density integration. In addition, capacitor area optimization and feedback control allowing generate constant output voltage are discussed. The 10MHz charge pump was integrated in 0.13μm CMOS process. Thanks to extra epitaxial trench isolation, 18V output voltage with the output current ranging up to 280μA is reached. The target application is the quadrature/frequency compensation of a 3-axis vibratory MEMS Gyroscope.