结晶氧化镉电子输运的新结果

ADVANCES IN APPLIED PHYSICS Pub Date : 1900-01-01 DOI:10.12988/AAP.2019.8118

M. Grado-Caffaro, M. Grado-Caffaro

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引用次数: 0

摘要

在与实验数据一致的情况下，我们提出了有关结晶氧化镉的电子传导的新结果。事实上，我们研究了电子在结晶氧化镉中的漂移迁移率，这种迁移率是氧化镉沉积过程中氧分压的函数。在我们的计算中，涉及到电子平均自由程。这个量被当作电子位置的期望值。pac: 73.50。- h, 73.61。- r, 73.61.Ga

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New results on electronic transport in crystalline cadmium oxide

In agreement with experimental data, we present relevant new results on electronic conduction in crystalline cadmium oxide. In fact, we study the electron driftmobility in crystalline cadmium oxide, this mobility being a function of the partial pressure of oxygen in the deposition process of CdO. In our calculations, the electron mean free path is involved. This quantity is treated as the expectation value of the electron position. PACS: 73.50.-h, 73.61.-r, 73.61.Ga

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ADVANCES IN APPLIED PHYSICS

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