碳纳米管记忆电阻器(NRAM®)在电路相关操作条件下的记忆更新特性

2020 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2020-04-01 DOI:10.1109/IRPS45951.2020.9128335

D. Veksler, G. Bersuker, Adam W. Bushmaker, M. Mason, P. Shrestha, K. Cheung, J. Campbell, T. Rueckes, L. Cleveland, H. Luan, D. Gilmer

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引用次数: 1

摘要

采用超短(100 ps -10 ns)电压脉冲技术，对碳纳米管(CNT)电阻变化记忆器件在高频使用条件下的神经形态应用进行了评估。在适当选择的操作条件下，碳纳米管显示出各种神经网络实现的切换特性。

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Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.

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2020 IEEE International Reliability Physics Symposium (IRPS)

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