基于片上热管理的0.2nJ/样品0.01mm2环形振荡器的温度传感器

N. Testi, Yang Xu
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引用次数: 6

摘要

在高密度集成电路中,高效节能和低面积温度传感器是持续监测硅温度的关键。本文采用台积电65nm CMOS工艺,设计并制作了一种基于0.2nJ/样品环振的温度传感器。2点校准后,传感器的最大误差为±3°C,分辨率为0.3°C。在此基础上,提出了一个能准确预测振荡器相位噪声对传感器误差影响的模型。该芯片占地面积仅为0.01mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.2nJ/sample 0.01mm2 ring oscillator based temperature sensor for on-chip thermal management
Energy efficient and low area temperature sensors are critical for constantly monitoring the silicon temperature in high density integrated circuits. In this paper, a 0.2nJ/sample ring oscillator based temperature sensor is designed and fabricated in TSMC 65nm CMOS technology. The sensor achieves a maximum inaccuracy of ±3°C after 2-point calibration and a resolution of 0.3°C. Furthermore, a model is proposed to accurately predict the effect of the oscillator phase noise on the error of the sensor. The chip occupies only 0.01mm2.
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