{"title":"基于片上热管理的0.2nJ/样品0.01mm2环形振荡器的温度传感器","authors":"N. Testi, Yang Xu","doi":"10.1109/ISQED.2013.6523686","DOIUrl":null,"url":null,"abstract":"Energy efficient and low area temperature sensors are critical for constantly monitoring the silicon temperature in high density integrated circuits. In this paper, a 0.2nJ/sample ring oscillator based temperature sensor is designed and fabricated in TSMC 65nm CMOS technology. The sensor achieves a maximum inaccuracy of ±3°C after 2-point calibration and a resolution of 0.3°C. Furthermore, a model is proposed to accurately predict the effect of the oscillator phase noise on the error of the sensor. The chip occupies only 0.01mm2.","PeriodicalId":127115,"journal":{"name":"International Symposium on Quality Electronic Design (ISQED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 0.2nJ/sample 0.01mm2 ring oscillator based temperature sensor for on-chip thermal management\",\"authors\":\"N. Testi, Yang Xu\",\"doi\":\"10.1109/ISQED.2013.6523686\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Energy efficient and low area temperature sensors are critical for constantly monitoring the silicon temperature in high density integrated circuits. In this paper, a 0.2nJ/sample ring oscillator based temperature sensor is designed and fabricated in TSMC 65nm CMOS technology. The sensor achieves a maximum inaccuracy of ±3°C after 2-point calibration and a resolution of 0.3°C. Furthermore, a model is proposed to accurately predict the effect of the oscillator phase noise on the error of the sensor. The chip occupies only 0.01mm2.\",\"PeriodicalId\":127115,\"journal\":{\"name\":\"International Symposium on Quality Electronic Design (ISQED)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Quality Electronic Design (ISQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2013.6523686\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2013.6523686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.2nJ/sample 0.01mm2 ring oscillator based temperature sensor for on-chip thermal management
Energy efficient and low area temperature sensors are critical for constantly monitoring the silicon temperature in high density integrated circuits. In this paper, a 0.2nJ/sample ring oscillator based temperature sensor is designed and fabricated in TSMC 65nm CMOS technology. The sensor achieves a maximum inaccuracy of ±3°C after 2-point calibration and a resolution of 0.3°C. Furthermore, a model is proposed to accurately predict the effect of the oscillator phase noise on the error of the sensor. The chip occupies only 0.01mm2.