用于高电压、高功率应用的马克斯堆叠IGBT调制器

R. Richter-Sand, R. Adler, R. Finch, B. Ashcraft
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引用次数: 12

摘要

许多在高压和高电流下需要<1 /spl mu/sec上升时间的应用,不能轻易满足采用低压固态元件驱动大升压匝比变压器的标准设计。北极星研究报告了几种产品的开发,这些产品使用马克思发电机堆叠排列低压IGBT器件,采用拓扑安装电压。该配置没有将半导体置于串联排列中,从而消除了单个器件的损耗会使IGBT部件堆叠过度压力的失效模式。利用该技术开发的等离子体源离子注入(PSII)调制器可提供30 kV, 400 A, 1-50 /spl mu/sec可变脉冲宽度,平均功率为7.5 kW。峰值功率高达2.4兆瓦已被证实。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Marx-stacked IGBT modulators for high voltage, high power applications
A number of applications that require <1 /spl mu/sec risetimes at high voltage and current cannot be easily satisfied with standard designs employing low voltage solid-state components driving a large step-up turns ratio transformer. North Star Research reports on the development of several products that employ the topological erection of voltages using a Marx generator stacking arrangement of lower voltage IGBT devices. The configuration does not place the semiconductors in a series arrangement, thereby eliminating a failure mode wherein the loss of a single device would over-stress the stack of IGBT parts. A plasma source ion implantation (PSII) modulator has been built using this technology development and provides 30 kV, 400 A, 1-50 /spl mu/sec variable pulse widths, and operates at 7.5 kW of average power. Peak powers as high as 2.4 MW have been demonstrated.
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