{"title":"用于高电压、高功率应用的马克斯堆叠IGBT调制器","authors":"R. Richter-Sand, R. Adler, R. Finch, B. Ashcraft","doi":"10.1109/MODSYM.2002.1189497","DOIUrl":null,"url":null,"abstract":"A number of applications that require <1 /spl mu/sec risetimes at high voltage and current cannot be easily satisfied with standard designs employing low voltage solid-state components driving a large step-up turns ratio transformer. North Star Research reports on the development of several products that employ the topological erection of voltages using a Marx generator stacking arrangement of lower voltage IGBT devices. The configuration does not place the semiconductors in a series arrangement, thereby eliminating a failure mode wherein the loss of a single device would over-stress the stack of IGBT parts. A plasma source ion implantation (PSII) modulator has been built using this technology development and provides 30 kV, 400 A, 1-50 /spl mu/sec variable pulse widths, and operates at 7.5 kW of average power. Peak powers as high as 2.4 MW have been demonstrated.","PeriodicalId":339166,"journal":{"name":"Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Marx-stacked IGBT modulators for high voltage, high power applications\",\"authors\":\"R. Richter-Sand, R. Adler, R. Finch, B. Ashcraft\",\"doi\":\"10.1109/MODSYM.2002.1189497\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A number of applications that require <1 /spl mu/sec risetimes at high voltage and current cannot be easily satisfied with standard designs employing low voltage solid-state components driving a large step-up turns ratio transformer. North Star Research reports on the development of several products that employ the topological erection of voltages using a Marx generator stacking arrangement of lower voltage IGBT devices. The configuration does not place the semiconductors in a series arrangement, thereby eliminating a failure mode wherein the loss of a single device would over-stress the stack of IGBT parts. A plasma source ion implantation (PSII) modulator has been built using this technology development and provides 30 kV, 400 A, 1-50 /spl mu/sec variable pulse widths, and operates at 7.5 kW of average power. Peak powers as high as 2.4 MW have been demonstrated.\",\"PeriodicalId\":339166,\"journal\":{\"name\":\"Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MODSYM.2002.1189497\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MODSYM.2002.1189497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
许多在高压和高电流下需要<1 /spl mu/sec上升时间的应用,不能轻易满足采用低压固态元件驱动大升压匝比变压器的标准设计。北极星研究报告了几种产品的开发,这些产品使用马克思发电机堆叠排列低压IGBT器件,采用拓扑安装电压。该配置没有将半导体置于串联排列中,从而消除了单个器件的损耗会使IGBT部件堆叠过度压力的失效模式。利用该技术开发的等离子体源离子注入(PSII)调制器可提供30 kV, 400 A, 1-50 /spl mu/sec可变脉冲宽度,平均功率为7.5 kW。峰值功率高达2.4兆瓦已被证实。
Marx-stacked IGBT modulators for high voltage, high power applications
A number of applications that require <1 /spl mu/sec risetimes at high voltage and current cannot be easily satisfied with standard designs employing low voltage solid-state components driving a large step-up turns ratio transformer. North Star Research reports on the development of several products that employ the topological erection of voltages using a Marx generator stacking arrangement of lower voltage IGBT devices. The configuration does not place the semiconductors in a series arrangement, thereby eliminating a failure mode wherein the loss of a single device would over-stress the stack of IGBT parts. A plasma source ion implantation (PSII) modulator has been built using this technology development and provides 30 kV, 400 A, 1-50 /spl mu/sec variable pulse widths, and operates at 7.5 kW of average power. Peak powers as high as 2.4 MW have been demonstrated.