T. Hamamoto, Y. Minami, T. Shino, A. Sakamoto, T. Higashi, N. Kusunoki, K. Fujita, K. Hatsuda, T. Ohsawa, N. Aoki, H. Tanimoto, M. Morikado, H. Nakajima, K. Inoh, A. Nitayama
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引用次数: 1
摘要
浮体电池(FBC)是一种基于SOI衬底的单晶体管存储电池,其目标是在SOC上实现高密度嵌入式存储。为了验证这种存储单元技术,设计并成功开发了带有FBC的128Mb SOI DRAM。综述了存储单元的设计和实验结果,包括信号和保持特性。本文还讨论了SOI DRAM作为嵌入式存储器的应用前景
A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications
Floating body cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed