单片光学微腔增强GaAs量子阱自发发射

Quantum Wells for Optics and Optoelectronics Pub Date : 1900-01-01 DOI:10.1364/qwoe.1989.md4

H. Yokoyama, K. Nishi, T. Anan, H. Yamada

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引用次数: 1

摘要

迄今为止，几个实验已经证明了材料在腔内的自发发射速率的变化(1-3)。从器件的角度来看，改变自发辐射也很有趣。例如，Kobayashi等人提出了无阈值激光器的概念，将自发发射的光子完全限制在封闭的微腔中。

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Enhanced Spontaneous Emission from GaAs Quantum Wells with Monolithic Optical Microcavities

To date, several experiments have demonstrated the alteration of materials’ spontaneous emission rate in cavities1-3). Altering the spontaneous emission is also interesting from the device point of view. For example, Kobayashi et al. proposed the concept of a thresholdless laser with the full confinement of spontaneously emitted photons in closed microcavities4).

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Quantum Wells for Optics and Optoelectronics

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