A.V. Kordesch, S. Awsare, J. Brennan, P. Guo, M. Hemming, M. Herman, P. Holzmann, E. Ng, Chun-Mai Liu, K. Su, C. Wang, M. Wu
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The reliability of multilevel analog memory in a voice storage and playback system using source-side injection flash
The reliability of a multilevel analog memory is mainly determined by data retention, cycling endurance, and read and write disturb. This storage system retains a voice message for 10 years and can record continuously for 50 K cycles. It can tolerate up to 300 single cell retention shifts >50 mV and still meet THD<0.5% and SINAD>32 dB.
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