{"title":"通过多电源电压控制低功耗FinFET互连的阈值电压","authors":"Anish Muttreja, Prateek Mishra, N. Jha","doi":"10.1109/VLSI.2008.117","DOIUrl":null,"url":null,"abstract":"In modern circuits, interconnect efficiency is a central determinant of circuit efficiency. Moreover, as technology is scaled down, the importance of efficient interconnect design is increasing. In this paper, we explore an option for low-power interconnect synthesis at the 32 nm node and beyond, using fin-type field-effect transistors (FinFETs) which are a promising substitute for bulk CMOS at the considered gate lengths. We consider a previously-unexplored mechanism for improving FinFET efficiency, called threshold voltage control through multiple supply voltages (TCMS), which is significantly different from conventional multiple-supply voltage schemes. We develop a circuit design for a FinFET buffer using TCMS. We describe a variation of van Ginneken's classic dynamic programming framework for solving the problem of power-optimal TCMS buffer insertion on a given routing tree. We show that, on an average, TCMS can provide power savings of 50.41% and device area savings of 9.17% compared to a state-of-the-art dual-Vdd interconnect synthesis scheme.","PeriodicalId":143886,"journal":{"name":"21st International Conference on VLSI Design (VLSID 2008)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Threshold Voltage Control through Multiple Supply Voltages for Power-Efficient FinFET Interconnects\",\"authors\":\"Anish Muttreja, Prateek Mishra, N. Jha\",\"doi\":\"10.1109/VLSI.2008.117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In modern circuits, interconnect efficiency is a central determinant of circuit efficiency. Moreover, as technology is scaled down, the importance of efficient interconnect design is increasing. In this paper, we explore an option for low-power interconnect synthesis at the 32 nm node and beyond, using fin-type field-effect transistors (FinFETs) which are a promising substitute for bulk CMOS at the considered gate lengths. We consider a previously-unexplored mechanism for improving FinFET efficiency, called threshold voltage control through multiple supply voltages (TCMS), which is significantly different from conventional multiple-supply voltage schemes. We develop a circuit design for a FinFET buffer using TCMS. We describe a variation of van Ginneken's classic dynamic programming framework for solving the problem of power-optimal TCMS buffer insertion on a given routing tree. We show that, on an average, TCMS can provide power savings of 50.41% and device area savings of 9.17% compared to a state-of-the-art dual-Vdd interconnect synthesis scheme.\",\"PeriodicalId\":143886,\"journal\":{\"name\":\"21st International Conference on VLSI Design (VLSID 2008)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-01-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"21st International Conference on VLSI Design (VLSID 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.2008.117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"21st International Conference on VLSI Design (VLSID 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.2008.117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Threshold Voltage Control through Multiple Supply Voltages for Power-Efficient FinFET Interconnects
In modern circuits, interconnect efficiency is a central determinant of circuit efficiency. Moreover, as technology is scaled down, the importance of efficient interconnect design is increasing. In this paper, we explore an option for low-power interconnect synthesis at the 32 nm node and beyond, using fin-type field-effect transistors (FinFETs) which are a promising substitute for bulk CMOS at the considered gate lengths. We consider a previously-unexplored mechanism for improving FinFET efficiency, called threshold voltage control through multiple supply voltages (TCMS), which is significantly different from conventional multiple-supply voltage schemes. We develop a circuit design for a FinFET buffer using TCMS. We describe a variation of van Ginneken's classic dynamic programming framework for solving the problem of power-optimal TCMS buffer insertion on a given routing tree. We show that, on an average, TCMS can provide power savings of 50.41% and device area savings of 9.17% compared to a state-of-the-art dual-Vdd interconnect synthesis scheme.