通过多电源电压控制低功耗FinFET互连的阈值电压

Anish Muttreja, Prateek Mishra, N. Jha
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引用次数: 17

摘要

在现代电路中,互连效率是电路效率的主要决定因素。此外,随着技术规模的缩小,高效互连设计的重要性也在增加。在本文中,我们探索了在32nm节点及以上的低功耗互连合成的选择,使用鳍型场效应晶体管(finfet),这是在考虑的栅极长度上块状CMOS的有前途的替代品。我们考虑了一种以前未被探索的提高FinFET效率的机制,即通过多电源电压(TCMS)进行阈值电压控制,这与传统的多电源电压方案有很大不同。我们开发了一种使用TCMS的FinFET缓冲器的电路设计。我们描述了van Ginneken经典动态规划框架的一个变体,用于解决给定路由树上功率最优的TCMS缓冲区插入问题。我们表明,与最先进的双vdd互连合成方案相比,TCMS平均可以节省50.41%的功耗和9.17%的器件面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Threshold Voltage Control through Multiple Supply Voltages for Power-Efficient FinFET Interconnects
In modern circuits, interconnect efficiency is a central determinant of circuit efficiency. Moreover, as technology is scaled down, the importance of efficient interconnect design is increasing. In this paper, we explore an option for low-power interconnect synthesis at the 32 nm node and beyond, using fin-type field-effect transistors (FinFETs) which are a promising substitute for bulk CMOS at the considered gate lengths. We consider a previously-unexplored mechanism for improving FinFET efficiency, called threshold voltage control through multiple supply voltages (TCMS), which is significantly different from conventional multiple-supply voltage schemes. We develop a circuit design for a FinFET buffer using TCMS. We describe a variation of van Ginneken's classic dynamic programming framework for solving the problem of power-optimal TCMS buffer insertion on a given routing tree. We show that, on an average, TCMS can provide power savings of 50.41% and device area savings of 9.17% compared to a state-of-the-art dual-Vdd interconnect synthesis scheme.
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