{"title":"一种用于高速接口的可编程低面积片内终端","authors":"Luisa Dovale, Juan Sebastian Moya, E. Roa","doi":"10.1109/LASCAS.2019.8667552","DOIUrl":null,"url":null,"abstract":"Although much progress has been made over the years in high-speed I/O, there is no comprehensive characterization of their termination design. In contrast to the widespread notion that a programmable termination might not offer any challenge, electromigration in conjunction with ESD compliance and programmability demand considerable attention during the termination design. Here we combine a design methodology and circuit techniques to address the hinted challenges. Overall, our study provides a comprehensive characterization on the design of a 35Ω-to-65Ω matching network. As a result, this paper presents a programmable ESD-compliant on-die termination occupying an area of 0.03mm2 on a standard 180nm CMOS with a maximum worst case of 7.14mA static current consumption.","PeriodicalId":142430,"journal":{"name":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Programmable and Low-Area On-Die Termination for High-Speed Interfaces\",\"authors\":\"Luisa Dovale, Juan Sebastian Moya, E. Roa\",\"doi\":\"10.1109/LASCAS.2019.8667552\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Although much progress has been made over the years in high-speed I/O, there is no comprehensive characterization of their termination design. In contrast to the widespread notion that a programmable termination might not offer any challenge, electromigration in conjunction with ESD compliance and programmability demand considerable attention during the termination design. Here we combine a design methodology and circuit techniques to address the hinted challenges. Overall, our study provides a comprehensive characterization on the design of a 35Ω-to-65Ω matching network. As a result, this paper presents a programmable ESD-compliant on-die termination occupying an area of 0.03mm2 on a standard 180nm CMOS with a maximum worst case of 7.14mA static current consumption.\",\"PeriodicalId\":142430,\"journal\":{\"name\":\"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LASCAS.2019.8667552\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2019.8667552","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Programmable and Low-Area On-Die Termination for High-Speed Interfaces
Although much progress has been made over the years in high-speed I/O, there is no comprehensive characterization of their termination design. In contrast to the widespread notion that a programmable termination might not offer any challenge, electromigration in conjunction with ESD compliance and programmability demand considerable attention during the termination design. Here we combine a design methodology and circuit techniques to address the hinted challenges. Overall, our study provides a comprehensive characterization on the design of a 35Ω-to-65Ω matching network. As a result, this paper presents a programmable ESD-compliant on-die termination occupying an area of 0.03mm2 on a standard 180nm CMOS with a maximum worst case of 7.14mA static current consumption.