短通道无结多栅极晶体管的性能研究

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI:10.1109/ULIS.2011.5758005

P. Razavi, G. Fagas, I. Ferain, N. Akhavan, R. Yu, J. Colinge

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引用次数: 16

摘要

通过比较无结GAA晶体管与累积型GAA晶体管的I_V特性、亚阈值摆幅和漏极诱导势垒降低(DIBL)，研究了短通道无结GAA晶体管的性能。我们还比较了不同晶圆和输运方向下无结GAA晶体管的I_V特性。研究了不同晶圆取向和沟道取向的mugfet。

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Performance investigation of short-channel junctionless multigate transistors

We investigate the performance of short channel junctionless gate-all-around (GAA) transistors, by comparing the I_V characteristics, subthreshold swing and drain-induced barrier lowring (DIBL) of junctionless GAA transistors with accumulation-mode GAA transistors. We also compare the I_V characteristics of junctionless GAA transistors for different wafer and transport orientations. MuGFETs are investigated for different wafer and channel orientation.

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Ulis 2011 Ultimate Integration on Silicon

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