低饱和起始晶体管设计的改进

Eliana Silva dos Santos, F. Andrade, M. D. Pereira, A. Cunha
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引用次数: 1

摘要

LSOT(低饱和起始晶体管)是一种四晶体管网络,通过补偿漏极电流的反向饱和分量,模拟具有低得多饱和起始电压的MOS器件。由于结构中的电流过补偿,等效器件的直流输出特性可能出现不理想的驼峰。这项工作提出了一种方法来适当地调整LSOT的大小,从而获得更平滑的特性。此外,还建议增加一个简单的开关来自动切断LSOT结构的辅助分支,以便在不增加总功率的情况下使用更短的器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvements on the Design of the Low Saturation Onset Transistor
The LSOT (low saturation onset transistor) is a four-transistor network that emulates a MOS device with much lower saturation onset voltage by compensating the reverse saturation component of the drain current through its main transistor. Due to current overcompensation in the structure, the DC output characteristic of the equivalent device may present an undesirable hump. This work presents a methodology to properly size the LSOT leading to a smoother characteristic. Moreover, the addition of a simple switch to automatically cut-off an auxiliary branch of the LSOT structure is also proposed, to allow the use of shorter devices without augmenting overall power.
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