MCM互连的宽带损耗模型

J. Peeters, E. Beyne, G. Brandli
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引用次数: 1

摘要

分析了多芯片模块互连的导电损耗。将导体表面阻抗的分布式网络模型扩展到包括向直流电阻率的过渡以及阻挡层和粘附层的影响。利用该模型,推导了适用于有损互连下数字信号传输的基于快速傅里叶变换(FFT)的暂态分析网络模拟器的宽带损耗表达式。该表达式用于模拟高达18 GHz的测量散射参数特性,适用于不同的线类型。即使在涉及到厚镍势垒层的磁效应时,测量和模拟之间也实现了良好的对应。最后,将模型整合到暂态分析网络仿真程序中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A broad band loss model for MCM interconnections
Conductive losses of multichip module interconnections are analyzed. A distributed network model for the conductor surface impedance is extended to include transition to DC resistivity and the effect of barrier and adhesion layers. Using the model, a broadband loss expression suitable for use in fast Fourier transform (FFT)-based transient analysis network simulators for digital signal transmission on lossy interconnections is derived. The expression is used to model measured scattering parameter characteristics up to 18 GHz, for different line types. Excellent correspondence between measurements and simulations is achieved, even when magnetic effects of a thick nickel barrier layer are involved. Finally, the models are incorporated in a transient analysis network simulation program.<>
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