{"title":"MCM互连的宽带损耗模型","authors":"J. Peeters, E. Beyne, G. Brandli","doi":"10.1109/MCMC.1993.302142","DOIUrl":null,"url":null,"abstract":"Conductive losses of multichip module interconnections are analyzed. A distributed network model for the conductor surface impedance is extended to include transition to DC resistivity and the effect of barrier and adhesion layers. Using the model, a broadband loss expression suitable for use in fast Fourier transform (FFT)-based transient analysis network simulators for digital signal transmission on lossy interconnections is derived. The expression is used to model measured scattering parameter characteristics up to 18 GHz, for different line types. Excellent correspondence between measurements and simulations is achieved, even when magnetic effects of a thick nickel barrier layer are involved. Finally, the models are incorporated in a transient analysis network simulation program.<<ETX>>","PeriodicalId":143140,"journal":{"name":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A broad band loss model for MCM interconnections\",\"authors\":\"J. Peeters, E. Beyne, G. Brandli\",\"doi\":\"10.1109/MCMC.1993.302142\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conductive losses of multichip module interconnections are analyzed. A distributed network model for the conductor surface impedance is extended to include transition to DC resistivity and the effect of barrier and adhesion layers. Using the model, a broadband loss expression suitable for use in fast Fourier transform (FFT)-based transient analysis network simulators for digital signal transmission on lossy interconnections is derived. The expression is used to model measured scattering parameter characteristics up to 18 GHz, for different line types. Excellent correspondence between measurements and simulations is achieved, even when magnetic effects of a thick nickel barrier layer are involved. Finally, the models are incorporated in a transient analysis network simulation program.<<ETX>>\",\"PeriodicalId\":143140,\"journal\":{\"name\":\"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCMC.1993.302142\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1993.302142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Conductive losses of multichip module interconnections are analyzed. A distributed network model for the conductor surface impedance is extended to include transition to DC resistivity and the effect of barrier and adhesion layers. Using the model, a broadband loss expression suitable for use in fast Fourier transform (FFT)-based transient analysis network simulators for digital signal transmission on lossy interconnections is derived. The expression is used to model measured scattering parameter characteristics up to 18 GHz, for different line types. Excellent correspondence between measurements and simulations is achieved, even when magnetic effects of a thick nickel barrier layer are involved. Finally, the models are incorporated in a transient analysis network simulation program.<>