一种新的具有精确基板建模的片上对称变压器高可扩展等效电路模型

Chuan Wang, H. Liao, Chen Li, Yongzhong Xiong, Ru Huang
{"title":"一种新的具有精确基板建模的片上对称变压器高可扩展等效电路模型","authors":"Chuan Wang, H. Liao, Chen Li, Yongzhong Xiong, Ru Huang","doi":"10.1109/RFIC.2008.4561530","DOIUrl":null,"url":null,"abstract":"A new equivalent circuit model for on-chip symmetrical transformers is presented with all the model elements driven from fabrication specifications. Two extra coupled transformer loops are developed for each coil to calculate the parameters of skin effect, proximity effect and reflective effect of substrate eddy current respectively. Model accuracy is demonstrated by comparing simulated and measured S-parameters, coils inductance, coupling coefficient, and maximum available gain over a wide range of geometry configuration.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A new highly-scalable equivalent circuit model for on-chip symmetrical transformer with accurate substrate modeling\",\"authors\":\"Chuan Wang, H. Liao, Chen Li, Yongzhong Xiong, Ru Huang\",\"doi\":\"10.1109/RFIC.2008.4561530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new equivalent circuit model for on-chip symmetrical transformers is presented with all the model elements driven from fabrication specifications. Two extra coupled transformer loops are developed for each coil to calculate the parameters of skin effect, proximity effect and reflective effect of substrate eddy current respectively. Model accuracy is demonstrated by comparing simulated and measured S-parameters, coils inductance, coupling coefficient, and maximum available gain over a wide range of geometry configuration.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

提出了一种新的片上对称变压器等效电路模型,该模型的所有元件均由制造规范驱动。为每个线圈设计了两个额外的耦合变压器回路,分别计算基片涡流的趋肤效应、接近效应和反射效应参数。通过比较模拟和测量的s参数,线圈电感,耦合系数和在广泛的几何配置的最大可用增益来证明模型的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new highly-scalable equivalent circuit model for on-chip symmetrical transformer with accurate substrate modeling
A new equivalent circuit model for on-chip symmetrical transformers is presented with all the model elements driven from fabrication specifications. Two extra coupled transformer loops are developed for each coil to calculate the parameters of skin effect, proximity effect and reflective effect of substrate eddy current respectively. Model accuracy is demonstrated by comparing simulated and measured S-parameters, coils inductance, coupling coefficient, and maximum available gain over a wide range of geometry configuration.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信