L. Witters, J. Mitard, R. Loo, S. Demuynck, S. Chew, T. Schram, Z. Tao, A. Hikavyy, J. W. Sun, A. Milenin, H. Mertens, C. Vrancken, P. Favia, M. Schaekers, H. Bender, N. Horiguchi, R. Langer, K. Barla, D. Mocuta, N. Collaert, A. Thean
{"title":"采用替代通道、替代金属栅极和无锗局部互连技术在45nm翅片间距上制备应变锗量子阱p- finfet","authors":"L. Witters, J. Mitard, R. Loo, S. Demuynck, S. Chew, T. Schram, Z. Tao, A. Hikavyy, J. W. Sun, A. Milenin, H. Mertens, C. Vrancken, P. Favia, M. Schaekers, H. Bender, N. Horiguchi, R. Langer, K. Barla, D. Mocuta, N. Collaert, A. Thean","doi":"10.1109/VLSIT.2015.7223701","DOIUrl":null,"url":null,"abstract":"Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The ION/IOFF benchmark shows the high density strained Ge p-FinFETs in this work outperform the best published isolated strained Ge on SiGe devices.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":"{\"title\":\"Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect\",\"authors\":\"L. Witters, J. Mitard, R. Loo, S. Demuynck, S. Chew, T. Schram, Z. Tao, A. Hikavyy, J. W. Sun, A. Milenin, H. Mertens, C. Vrancken, P. Favia, M. Schaekers, H. Bender, N. Horiguchi, R. Langer, K. Barla, D. Mocuta, N. Collaert, A. Thean\",\"doi\":\"10.1109/VLSIT.2015.7223701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The ION/IOFF benchmark shows the high density strained Ge p-FinFETs in this work outperform the best published isolated strained Ge on SiGe devices.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"38\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223701\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect
Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The ION/IOFF benchmark shows the high density strained Ge p-FinFETs in this work outperform the best published isolated strained Ge on SiGe devices.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
