Complex Electrical Characterization of a-Si/c-Si Solar Heterostructures with Conductive Antireflection Coatings

This paper presents results of the development of silicon heterojunction solar cells with a front high band gap amorphous silicon carbide emitter. The attention is focused on the optimization of deposition conditions of sputtered ITO. For the comparison as an alternative also IZO transparent conduction oxides (TCO) were prepared and measured. ITO (IZO) are key layers to attain good antireflection and collection properties. It is shown that sputtering current affects both optical as well as electrical properties of prepared ITO. Complex electrical characterization of prepared solar heterostructures was performed by using DC and AC techniques. Measurements were performed under the dark and light conditions. The obtained results show the usefulness of complementary approach in order to assess the behavior of measured samples. The best efficiency of 9.66 % is attained with ITO layer deposited at low sputtering current.