利用反采样链(BSC)技术统计表征14nm三栅极CMOS的辐射诱发脉冲波形和触发器软误差

2017 Symposium on VLSI Technology Pub Date : 1900-01-01 DOI:10.23919/vlsit.2017.7998134

Saurabh Kumar, M. Cho, L. Everson, Hoonki Kim, Qianying Tang, Paul R. Mazanec, P. Meinerzhagen, Andres F. Malavasi, D. Lake, Carlos Tokunaga, H. Quinn, M. Khellah, J. Tschanz, S. Borkar, V. De, C. Kim

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引用次数: 0

摘要

一种具有可调谐电流饥渴缓冲器的新型BSC电路在14nm三栅极CMOS中具有更高的灵敏度，可扩展性和精确的辐射诱导SET脉冲波形和触发器SER统计特性，从而能够改进包括NTV在内的电源电压范围内的SER估计和分析。

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Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique

A novel BSC circuit with tunable current starved buffers demonstrates higher sensitivity, scalability & accurate statistical characterization of radiation-induced SET pulse waveforms & flip-flop SER in 14nm tri-gate CMOS, thus enabling improved SER estimation & analysis for a range of supply voltages including NTV.

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2017 Symposium on VLSI Technology

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