一种用于负载和源拉力测量的半自动标量矢量装置

M. Avasarala
{"title":"一种用于负载和源拉力测量的半自动标量矢量装置","authors":"M. Avasarala","doi":"10.1109/ARFTG.1985.323622","DOIUrl":null,"url":null,"abstract":"A semi automated scalar vector measurement setup for the characterization of a GaAs power FET is described. Input and output impedances of a power FET can be measured as a function of a scalar parameter such as Pout, gain, efficiency, AM/PM, etc. Computer control enables quick, accurate and repeatable measurements right up to the chip device plane. Results of a single stage Internally Matched power FET designed using measurements from the above setup are given.","PeriodicalId":101637,"journal":{"name":"25th ARFTG Conference Digest","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Semi Automated Scalar-Vector Setup for Load and Source Pull Measurement\",\"authors\":\"M. Avasarala\",\"doi\":\"10.1109/ARFTG.1985.323622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A semi automated scalar vector measurement setup for the characterization of a GaAs power FET is described. Input and output impedances of a power FET can be measured as a function of a scalar parameter such as Pout, gain, efficiency, AM/PM, etc. Computer control enables quick, accurate and repeatable measurements right up to the chip device plane. Results of a single stage Internally Matched power FET designed using measurements from the above setup are given.\",\"PeriodicalId\":101637,\"journal\":{\"name\":\"25th ARFTG Conference Digest\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"25th ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1985.323622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"25th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1985.323622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

描述了用于表征GaAs功率场效应管的半自动标量矢量测量装置。功率场效应管的输入和输出阻抗可以作为标量参数(如输出、增益、效率、AM/PM等)的函数来测量。计算机控制可以快速,准确和可重复的测量到芯片设备平面。给出了利用上述装置的测量设计的单级内部匹配功率场效应管的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Semi Automated Scalar-Vector Setup for Load and Source Pull Measurement
A semi automated scalar vector measurement setup for the characterization of a GaAs power FET is described. Input and output impedances of a power FET can be measured as a function of a scalar parameter such as Pout, gain, efficiency, AM/PM, etc. Computer control enables quick, accurate and repeatable measurements right up to the chip device plane. Results of a single stage Internally Matched power FET designed using measurements from the above setup are given.
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