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用于单片微波集成电路的SOS mosfet

1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1982.1156332
S. Yu, J. Eshbach, Ying Hwang, R. Naster
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引用次数: 0

摘要

将描述工作在3GHz，输出功率密度为175mW/mm，η漏极= 51%，η功率增加= 31%的大栅极宽度SOS mesfet。测量器件阻抗与功率水平的关系。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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SOS MOSFETs for monolithic microwave ICs
Large gate-width SOS MESFETs, operated at 3GHz, with output power densities of 175mW/mm,ηdrain = 51% and ηpower-added = 31%, will be described. Device impedances were measured versus power level.
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1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
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