TUNNETT二极管太赫兹器件的研制及其应用

J. Nishizawa, T. Kurabayashi, P. Płotka, H. Makabe
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引用次数: 6

摘要

近年来,太赫兹(THz)光谱成像技术在医学、药学、生物学等领域的应用越来越受到关注[1]。我们需要一种紧凑的、频率和输出功率高度稳定的电子器件太赫兹光源。我们制造了在室温下工作的频率范围高达700 GHz的连续波基模振荡TUNNETT。TUNNETT是1958年发明的隧穿式电子注入跃迁时间二极管,如图1所示[2]。Nishizawa于1968年演示了tunnett的第一个操作装置[3],Eisele等人实现了产生100 mW ofRF功率的基模100 GHz装置[4]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of TUNNETT Diode as Terahertz Device and Its Applications
Recently, terahertz (THz) spectroscopy with imaging has attracted attention for application in the fields of medicine, pharmacy, and biology [1]. A compact THz light source by electron device with highly stable of frequency and output power is desired. We have fabricated TUNNETT with continuous-wave fundamental-mode oscillation in the frequency range up to 700 GHz at room-temperature operation. TUNNETT, a transit-time diodes with tunnel injection of electron shown in Figure 1 was invented in 1958 [2]. The first operating device ofTUNNETT was demonstrated by Nishizawa in 1968 [3], and fundamental-mode 100 GHz devices generating 100 mW ofRF power were achieved by Eisele et al [4].
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