基于先进技术节点的高性能内存测试自定义算法

S. Chen, N. Huang, Ting-Pu Tai, Actel Niu
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引用次数: 0

摘要

随着工艺尺寸的缩小,芯片质量变得越来越难以维持。不仅设计复杂性更高,而且新的缺陷类型导致DPM(每百万缺陷数)增加。与此同时,许多应用中的嵌入式存储器数量持续增长,使得存储器测试成为IC制造中保持低成本和高质量的关键因素。当商业EDA工具与更大的测试流程自动化需求保持同步时,还需要新的测试算法来最小化先进技术节点的现场回报率。本文描述了ASIC供应商如何开发定制的内存测试算法来增强他们的整体IC测试策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Customized Algorithms for High Performance Memory Test in Advanced Technology Node
Chip quality is becoming more difficult to maintain as the process geometry shrinks. Not only is design complexity higher, but new defect types cause DPM (defects per million) to increase. At the same time, the amount of embedded memory in many applications continues to grow, making memory testing a key factor in maintaining low cost and high quality in IC manufacturing. While commercial EDA tools are keeping pace with the need for greater test flow automation, new test algorithms are also needed to minimize the rate of field returns at advanced technology nodes. This paper describes how ASIC vendors can develop customized memory test algorithms to enhance their overall IC testing strategy.
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