{"title":"探索β - Ga2O3 MOSFET双阶栅氧化物设计在高功率微波应用中的适用性-第一部分","authors":"Priyanshi Goyal, H. Kaur","doi":"10.1109/LAEDC54796.2022.9908243","DOIUrl":null,"url":null,"abstract":"In the present work, step gate oxide design has been implemented on lateral β – Ga2O3 MOSFET with the objective of improving device performance for high power microwave applications. Device characteristics have been obtained by employing TCAD based numerical simulations. Rigorous analysis has been carried out to obtain optimal lengths of step gate oxides and these optimized lengths have been used to obtain various characteristics. A comparison of various characteristics of the optimized proposed device has been drawn with the conventional device to investigate device performance for high power and microwave applications.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part I\",\"authors\":\"Priyanshi Goyal, H. Kaur\",\"doi\":\"10.1109/LAEDC54796.2022.9908243\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present work, step gate oxide design has been implemented on lateral β – Ga2O3 MOSFET with the objective of improving device performance for high power microwave applications. Device characteristics have been obtained by employing TCAD based numerical simulations. Rigorous analysis has been carried out to obtain optimal lengths of step gate oxides and these optimized lengths have been used to obtain various characteristics. A comparison of various characteristics of the optimized proposed device has been drawn with the conventional device to investigate device performance for high power and microwave applications.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908243\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part I
In the present work, step gate oxide design has been implemented on lateral β – Ga2O3 MOSFET with the objective of improving device performance for high power microwave applications. Device characteristics have been obtained by employing TCAD based numerical simulations. Rigorous analysis has been carried out to obtain optimal lengths of step gate oxides and these optimized lengths have been used to obtain various characteristics. A comparison of various characteristics of the optimized proposed device has been drawn with the conventional device to investigate device performance for high power and microwave applications.
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