功率SOI结构中掺杂物重分布的新模型

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764102

T. Ishiyama, S. Matsumoto, T. Yachi, W. Fichtner

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引用次数: 0

摘要

我们提出了退火过程中SOI结构的层间模型，该模型解释了SOI结构中出现的磷堆积和硼偏析。仿真结果表明，该模型能够有效预测SOI功率器件的电学特性。

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A new model for dopant redistribution in a power SOI structure

We propose an interlayer model of the SOI structure during annealing, that explains the phosphorus pile-up and boron segregation that occurs in the SOI structure. Simulated dopant profiles based on the model showed its usefulness in predicting the electrical characteristics of SOI power devices.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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