MRAM作为存储器的节能进展及其进一步降低能耗的潜力

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223638

H. Yoda, E. Kitagawa, N. Shimomura, S. Fujita, M. Amano

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引用次数: 6

摘要

STT(自旋传递扭矩)-MRAM的临界开关电流Isw在垂直MTJ的情况下降低了几个数量级，最先进的写入电荷Qw达到100-150fC的数量级。与传统存储系统相比，由于量子瓦特小，MRAM开始节省70-80%的能耗。对写入脉冲宽度的依赖性分析揭示了垂直MTJ进一步降低Iw和Qw的潜力。STT-MRAM被认为可以进一步降低能耗。

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The progresses of MRAM as a memory to save energy consumption and its potential for further reduction

Critical switching current, I_sw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Q_w, becomes the order of 100-150fC. With the small Q_w, MRAM starts to save energy consumption by 70-80% compared with a conventional memory system. Analysis of the write pulse-width dependence of I_w revealed a further potential of perpendicular MTJ to reduce I_w and Q_w. STT-MRAM is thought to achieve a further reduction of energy consumption.

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2015 Symposium on VLSI Technology (VLSI Technology)

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