可变带转移电子装置

2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW) Pub Date : 2007-06-25 DOI:10.1109/MSMW.2007.4294749

L. Storozhenko, Y. Arkusha, O. Botsula

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引用次数: 0

摘要

本文研究了A3B5基变带半导体化合物转移电子器件(TEDs)中空间电荷波出现和漂移的基本原理。应用变带半导体中电子谷间转移的双温度模型。研究了甘恩二极管在不同三层半导体化合物基上的工作特性。

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Variband Transferred Electron Devises

This paper studies the basic principle of the appearance and drift space charge waves in transferred electron devices (TEDs) on base A3B5 variband semiconductor compounds. The two-temperature model of the electron intervalley transfer in a variband semiconductor was applied. The operation of the Gunn diodes on base of different threefold semiconductor compounds are investigated.

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2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW)

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